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APT40M70B2VFRG

Advanced Power Technology
Part Number APT40M70B2VFRG
Manufacturer Advanced Power Technology
Description POWER MOS V FREDFET
Published Aug 16, 2008
Detailed Description 400V 57A APT40M70B2VFR *G APT40M70LVFR 0.070Ω APT40M70B2VFRG* APT40M70LVFRG* Denotes RoHS Compliant, Pb Free Termin...
Datasheet PDF File APT40M70B2VFRG PDF File

APT40M70B2VFRG
APT40M70B2VFRG

Overview
400V 57A APT40M70B2VFR *G APT40M70LVFR 0.
070Ω APT40M70B2VFRG* APT40M70LVFRG* Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V ® FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
www.
DataSheet4U.
com T-MAX™ TO-264 LVFR • T-MAX™ or TO-264 Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • Avalanche Energy Rated • FAST RECOVERY BODY DIODE G D S All Ratings: TC = 25°C unless otherwise specified.
APT40M70B2_LVFR(G) UNIT Volts Amps 400 57 228 ±30 ±40 520 4.
16 -55 to 150 300 57 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 400 57 0.
070 250 1000 ±100 2 4 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID[Cont.
]) Ohms µA nA Volts 3-2006 050-5850 Rev A Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.
5mA) APT Website - http://www.
advancedpower.
com CAUTION: These Devices are Sensitive to Electrostatic ...


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