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APT41F100J

Microsemi Corporation
Part Number APT41F100J
Manufacturer Microsemi Corporation
Description N-Channel FREDFET
Published Aug 16, 2008
Detailed Description APT41F100J 1000V, 41A, 0.21Ω Max, trr ≤400ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel swi...
Datasheet PDF File APT41F100J PDF File

APT41F100J
APT41F100J

Overview
APT41F100J 1000V, 41A, 0.
21Ω Max, trr ≤400ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.
Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss.
The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
S G D S SO 2 T- 27 ISOTOP ® "UL Recognized" file # E145592 APT19F100J G D Single die FREDFET www.
DataSheet4U.
com S FEATURES • Fast switching with low EMI • Low trr for high reliability • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • PFC and other boost converter • Buck converter • Single and two switch forward • Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 41 26 260 ±30 4075 33 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.
) Package Weight -55 2500 1.
03 29.
2 10 1.
1 0.
15 150 Min Typ Max 960 0.
13 Unit W °C/W °C V 3-2007 050-8128 Rev A oz g in·lbf N·m Torque Terminals and Mounting Sc...


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