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APT47N60SC3

Advanced Power Technology
Part Number APT47N60SC3
Manufacturer Advanced Power Technology
Description Super Junction MOSFET
Published Aug 16, 2008
Detailed Description APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω D3PAK Super Junction MOSFET TO-247 C O OLMOS Power Semiconductors • Ultra low...
Datasheet PDF File APT47N60SC3 PDF File

APT47N60SC3
APT47N60SC3

Overview
APT47N60BC3 APT47N60SC3 600V 47A 0.
070Ω D3PAK Super Junction MOSFET TO-247 C O OLMOS Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg www.
DataSheet4U.
com • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt D G S All Ratings: TC = 25°C unless otherwise specified.
APT47N60BC3_SC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 600 47 141 ±20 ±30 417 3.
33 -55 to 150 260 50 20 1 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/°C °C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.
06 0.
5 0.
07 25 250 ±100 2.
10 3 3.
9 (VGS = 10V, ID = 30A) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.
7mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com "COOLMOS comprise a new family of transistors developed by Infineon Technologies AG.
"COOLMOS" is a trademark of Infineon Technologies AG" ™ 050-7144 Rev E 4-2004 DYNAMIC CHARACTERISTICS Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf www.
DataSheet4U.
com APT47N60BC3_SC3 Test Conditions VGS = 0V VDS = 25V f = 1...


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