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IXGH32N170

IXYS Corporation
Part Number IXGH32N170
Manufacturer IXYS Corporation
Description High Voltage IGBT
Published Aug 18, 2008
Detailed Description High Voltage IGBT Preliminary Data Sheet IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V =...
Datasheet PDF File IXGH32N170 PDF File

IXGH32N170
IXGH32N170

Overview
High Voltage IGBT Preliminary Data Sheet IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.
3 V = 250 ns www.
DataSheet4U.
com Symbol VCGR VGES VGEM IC25 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C Maximum Ratings 1700 1700 ± 20 ± 30 75 32 200 ICM = 90 @ 0.
8 VCES 350 -55 .
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+150 150 -55 .
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+150 300 260 V V V V A A A A TO-268 (IXGT) VCES G E C (TAB) IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TO-247 AD (IXGH) G C (TAB) C E C = Collector, TAB = Collector W °C °C °C °C °C z z G = Gate, E = Emitter, Features z Maximum Lea...


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