DatasheetsPDF.com

MT6L78FS

Toshiba Semiconductor
Part Number MT6L78FS
Manufacturer Toshiba Semiconductor
Description VHF-UHF Band Low Noise Amplifier Application
Published Aug 18, 2008
Detailed Description MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Tw...
Datasheet PDF File MT6L78FS PDF File

MT6L78FS
MT6L78FS

Overview
MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
0.
1±0.
05 0.
35 0.
35 1.
0±0.
05 0.
8±0.
05 0.
1±0.
05 0.
15±0.
05 Unit: mm 1.
0±0.
05 0.
7±0.
05 • • • Superior noise characteristics Superior performance in buffer and oscillator applications Lead (Pb)-free.
1 2 3 6 5 4 0.
1±0.
05 Mounted www.
DataSheet4U.
com Devices 0.
48 Q1 Corresponding three-pin products: fSM mold products MT3S11FS Q2 MT3S11AFS +0.
02 -0.
04 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Q1 VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg 13 6 1 40 10 100 Rating Q2 13 6 1 40 10 90 V V V mA mA mW °C °C Unit fS6 1.
Collector1 (C1) 2.
Emitter1 (E1) 3.
Collector2 (C2) 4.
Base2 (B2) 5.
Emitter2 (E2) 6.
Base1 (B1) JEDEC JEITA TOSHIBA Weight: 0.
001g (typ.
) ― ― 2-1F1A 105 (Note 2) 125 −55~125 Note 1: 10 mm2 × 1.
0 mm (t), mounted on a glass-epoxy printed circuit board.
Note 2: During two-element operation.
Marking (top view) 6 5 4 Pin Assignment (top view) B1 E2 B2 55 1 2 3 Q1 Q2 C1 E1 C2 1 2004-03-12 MT6L78FS Electrical Characteristics Q1 (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance Transition frequency Insertion gain Noise figure Symbol ICBO IEBO hFE Cre(Note) fT Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA 2 Min Typ.
Max 0.
1 1 160 0.
9 Unit ⎯ ⎯ 100 ⎯ ⎯ ⎯ 0.
65 6 3.
5 6.
5 2.
4 µA µA ⎯ pF GHz dB dB ⎯ 4 ⎯ ⎯ ⎯ 3.
2 ⎪S21e⎪ (1) ⎪S21e⎪2 (2) NF VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz ⎯ 4 ⎯ www.
DataSheet4U.
com Electrical Characteristics Q2 (Ta = 25°C) Characteristic Collector cut...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)