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CGH27060F

Cree
Part Number CGH27060F
Manufacturer Cree
Description GaN HEMT
Published Aug 18, 2008
Detailed Description PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride (GaN) high ele...
Datasheet PDF File CGH27060F PDF File

CGH27060F
CGH27060F

Overview
PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.
3-2.
9GHz WiMAX and BWA amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
www.
DataSheet4U.
com Package Type : 440193 PN: CGH2706 0F Typical Performance Over 2.
3-2.
6GHz Parameter Small Signal Gain EVM @ 39 dBm Drain Efficiency @ 39 dBm Input Return Loss 2.
3 GHz 13.
5 2.
1 24.
2 9.
8 (TC = 25˚C) of Demonstration Amplifier 2.
5 GHz 13.
0 1.
9 22.
5 7.
7 2.
6 GHz 12.
9 2.
2 22.
3 5.
9 Units dB % % dB 2.
4 GHz 13.
3 1.
9 23.
8 16.
0 Note: Measured in the CGH27060F-TB amplifier circuit, under 802.
16-2004 OFDM, 3.
5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features • • • • 2007 Rev 1.
0 – May 2.
3 - 2.
9 GHz Operation >13 d...


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