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IXSN55N120AU1

IXYS Corporation
Part Number IXSN55N120AU1
Manufacturer IXYS Corporation
Description High Voltage IGBT
Published Aug 19, 2008
Detailed Description High Voltage IGBT with Diode Short Circuit SOA Capability IXSN 55N120AU1 VCES = 1200 V IC25 = 110 A VCE(sat) = 4V 3 2...
Datasheet PDF File IXSN55N120AU1 PDF File

IXSN55N120AU1
IXSN55N120AU1

Overview
High Voltage IGBT with Diode Short Circuit SOA Capability IXSN 55N120AU1 VCES = 1200 V IC25 = 110 A VCE(sat) = 4V 3 2 Preliminary data 4 www.
DataSheet4U.
com Symbol 1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.
6 • VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C 50/60 Hz IISOL £ 1 mA IGBT Diode t = 1 min t=1s Maximum Ratings 1200 1200 ±20 ±30 110 55 160 ICM = 110 @ 0.
8 VCES 10 V A miniBLOC, SOT-227 B VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC PD VISOL TJ TJM Tstg Md 1 2 V V A A A A ms Features ...


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