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IXSN80N60AU1

IXYS Corporation
Part Number IXSN80N60AU1
Manufacturer IXYS Corporation
Description High Current IGBT
Published Aug 19, 2008
Detailed Description IGBT with Diode Short Circuit SOA Capability IXSN 80N60AU1 VCES IC25 VCE(sat) = 600 V = 160 A = 3V C G E www.DataSh...
Datasheet PDF File IXSN80N60AU1 PDF File

IXSN80N60AU1
IXSN80N60AU1

Overview
IGBT with Diode Short Circuit SOA Capability IXSN 80N60AU1 VCES IC25 VCE(sat) = 600 V = 160 A = 3V C G E www.
DataSheet4U.
com E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C 50/60 Hz IISOL £ 1 mA t = 1 min t=1s Maximum Ratings 600 600 ±20 ±30 160 80 320 ICM = 160 @ 0.
8 VCES 10 500 2500 3000 -55 .
.
.
+150 150 -55 .
.
.
+150 V A V V A A A A ms W V~ V~ °C °C °C miniBLOC, SOT-227 B E153432 G E E C E = Emitter , G = Gate, C = Collector E = Emitter   Either Emitter terminal can be used as Main or Kelvin Emitter Mounting torque Terminal connection torque (M4) 1.
5/13 Nm/lb.
in.
1.
5/13 Nm/lb.
in.
30 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
600 4 TJ = 25°C TJ = 125°C 8 1 15 ±100 3 V V mA mA ns V Features l International standard package miniBLOC l Aluminium-nitride isolation - high power dissipation l Isolation voltage 3000 V~ l UL registered E 153432 l Low VCE(sat) - for minimum on-state conduction losses l Fast Recovery Epitaxial Diode - short trr and IRM l Low collector-to-case capacitance (< 60 pF) - reduced RFI l Low package inductance (< 10 nH) - easy to drive and to protect Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies Advantages Space savings l Easy to mount with 2 screws l High power density l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3 mA, VGE = 0 V = 8 mA, VCE = VGE VCE = 0.
8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions.
94552E(7/00) © 2000 IXYS All rights reserved 1-...


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