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IXSN80N60BD1

Part Number	IXSN80N60BD1
Manufacturer	IXYS Corporation
Description	High Current IGBT
Published	Aug 19, 2008
Detailed Description	IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE(sat) tfi C G E = = = = 600 V 160 A 2.5 V 180...
Datasheet	IXSN80N60BD1 PDF File

Overview

IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE(sat) tfi C G E = = = = 600 V 160 A 2.
5 V 180 ns Preliminary Data Sheet E www.
DataSheet4U.
com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (Silicon chip capability) Lead current limit (RMS) TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive TC = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Maximum Ratings 600 600 ± 20 ± 30 160 100 80 300 ICM = 160 @ 0.
8 VCES 10 420 2500 3000 -55 .
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+150 150 -55 .
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+150 V A V V V CES V CGR V GES VGEM IC25 IL IC90 I CM SSOA (RBSOA)...

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IXSN80N60BD1 High Current IGBT - IXYS Corporation

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