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BAV20

Galaxy Semi-Conductor
Part Number BAV20
Manufacturer Galaxy Semi-Conductor
Description (BAVxx) SMALL SIGNAL SWITCHING DIODE
Published Aug 21, 2008
Detailed Description BL FEATURES GALAXY ELECTRICAL BAV17---BAV21 VOLTAGE RANGE: 20-200 V CURRENT: 250 mA SMALL SIGNAL SWITCHING DIODE Sil...
Datasheet PDF File BAV20 PDF File

BAV20
BAV20

Overview
BL FEATURES GALAXY ELECTRICAL BAV17---BAV21 VOLTAGE RANGE: 20-200 V CURRENT: 250 mA SMALL SIGNAL SWITCHING DIODE Silicon epitaxial planar diode High speed switching diode 500 m W power dissipation DO - 35(GLASS) www.
DataSheet4U.
com MECHANICAL DATA Case: DO-35,glass case Polarity: Color band denotes cathode Weight: 0.
004 ounces, 0.
13 gram s MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient temperature unless otherwise specified.
MAXIMUM RATINGS Reverse voltage Peak reverse voltage Average forw ard rectified current Half w ave rectification w ith resist.
load @TA =25 and f 50Hz Forw ard surge current @ t<1s and TJ =25 Pow er dissipation @ TA =25 Thermal resistance junction to ambient Junction temperature Storage temperature range VR V RM I(AV) IFSM P tot RθJA TJ TSTG BAV17 20 25 BAV18 50 60 BAV19 100 120 250 1) 1.
0 500 350 175 -55 --- +175 1) BAV20 150 200 BAV21 200 250 UNITS V V mA A mW K/W 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS Forw ard voltage @ IF=100mA Leakage current at reverse voltage @Tj=25 @Tj=100 f=1MHZ VF IR CJ t rr MIN - TYP 1.
5 - MAX 1.
0 UNITS V 100 15 50 nA µA pF ns www.
galaxycn.
com Capacitance @ V F=V R=0V Reverse recovery time from IF=30mA to IR=30mA from IRR=3mA, RL=100Ω.
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
Document Number 0268008 BLGALAXY ELECTRICAL 1.
RATINGS AND CHARACTERISTIC CURVES FIG.
1 -- FORWARD CHARACTERISTICS mA 1000 BAV17---BAV21 FIG.
2 -- ADMISSIBLE FORWARD CURRENT VERSUS AMBIENT TEMPERATURE A .
3 100 TJ=100 I O, I F .
2 DC CURRENT I F 10 IF TJ=25 www.
DataSheet4U.
com 1 .
1 CURRENT (RECTIF.
) I F(AV) .
1 1 .
01 0 .
2 .
4 .
6 .
8 1.
0V 0 30 60 90 120 TA 150¡æ VF FIG.
3 -- ADMISSIBLE POWER DISSLPATION VERSUS AMBIENT TEMPERATURE mW 500 FIG.
4 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE 1000 I R (T J ) 400 P tot I R (25 ) 100 300 10 200 ...


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