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2SK3501-01

Fuji Electric
Part Number 2SK3501-01
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Aug 23, 2008
Detailed Description 2SK3501-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Av...
Datasheet PDF File 2SK3501-01 PDF File

2SK3501-01
2SK3501-01

Overview
2SK3501-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Applications www.
DataSheet4U.
com Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 600 A ID ±10 A ID(puls] ±40 V VGS ±30 A IAR *2 10 mJ EAS *1 217 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 2.
02 W Tc=25°C 95 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=3.
99mH, Vcc=60V *2 Tch < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < =150°C *3 IF< *4 VDS < = 600V Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
power dissipation Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID= 250µA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V RGS=10 Ω VCC =250V ID=10A VGS=10V L=3.
99mH Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C Min.
600 3.
0 Typ.
Max.
5.
0 25 250 100 0.
75 Units V V µA ...


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