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2SK3504-01

Fuji Electric
Part Number 2SK3504-01
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Aug 23, 2008
Detailed Description 2SK3504-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Av...
Datasheet PDF File 2SK3504-01 PDF File

2SK3504-01
2SK3504-01

Overview
2SK3504-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Applications www.
DataSheet4U.
com Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 500 ±16 ±64 ±30 16 212.
2 20 5 2.
02 225 +150 Operating and storage -55 to +150 temperature range *1 L=1.
52mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch < =150°C *3 IF< = BVDSS, Tch < = 150°C *4 VDS < = 500V = -ID, -di/dt=50A/µs, Vcc < Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Unit V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=7A VGS=10V ID=7A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=7A VGS=10V RGS=10 Ω V CC =250V ID=14A VGS=10V L=1.
52mH Tch=25°C IF=14A VGS=0V Tch=25°C IF=14A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C Min.
500 3...


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