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9T15GH

Advanced Power Electronics
Part Number 9T15GH
Manufacturer Advanced Power Electronics
Description AP9T15GH
Published Aug 25, 2008
Detailed Description AP9T15GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ www.DataSheet4U.com Capable of ...
Datasheet PDF File 9T15GH PDF File

9T15GH
9T15GH

Overview
AP9T15GH/J Pb Free Plating Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ www.
DataSheet4U.
com Capable of 2.
5V gate drive G S ▼ Single Drive Requirement ▼ RoHS Compliant D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 50mΩ 12.
5A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.
5V Continuous Drain Current, V GS @ 4.
5V Pulsed Drain Current 1 Rating 20 ±16 12.
5 8 60 12.
5 0.
1 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 10 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200908052-1/4 AP9T15GH/J Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) www.
DataSheet4U.
com VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
20 0.
5 Typ.
0.
02 10 5 1 2 8 55 10 3 360 70 50 1.
67 Max.
Units 50 80 1.
5 1 25 ±100 8 580 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω o Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC) o VGS=4.
5V, ID=6A VGS=2.
5V, ID=5.
2A VDS=VGS, ID=250uA VDS=5V, ID=10A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=±16V ID=10A VDS=16V VGS=4.
5V VDS=10V ID=10A RG=3.
3Ω,VGS=5V RD=1Ω VGS=0V VDS=20V f=1.
0MHz f=1.
0MHz...


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