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STD3NC60

STMicroelectronics
Part Number STD3NC60
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Sep 4, 2008
Detailed Description STD3NC60 STD3NC60-1 N-CHANNEL 600V - 1.8Ω - 3.2A DPAK / IPAK PowerMesh™II MOSFET TYPE STD3NC60 STD3NC60-1 www.DataSheet4...
Datasheet PDF File STD3NC60 PDF File

STD3NC60
STD3NC60

Overview
STD3NC60 STD3NC60-1 N-CHANNEL 600V - 1.
8Ω - 3.
2A DPAK / IPAK PowerMesh™II MOSFET TYPE STD3NC60 STD3NC60-1 www.
DataSheet4U.
com s s s s s s VDSS 600V 600V RDS(on) < 2.
2Ω < 2.
2Ω ID 3.
2A 3.
2A TYPICAL RDS(on) = 1.
8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (SMD PACKAGE) 3 1 DPAK No Suffix 1 3 2 IPAK (Suffix”-1”) DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature Value 600 600 ±30 3.
2 2 12.
8 50 0.
4 3.
5 –65 to 150 150 Unit V V V A A A W W/°C V/ns °C °C (•)Pulse width limited by safe operating area (1)ISD ≤3.
2A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
August 2002 1/10 STD3NC60 - STD3NC60-1 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.
5 100 275 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS www.
DataSheet4U.
com Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 3.
2 270 Unit A mJ ...


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