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11N06LT

NXP Semiconductors
Part Number 11N06LT
Manufacturer NXP Semiconductors
Description PHB11N06LT
Published Sep 9, 2008
Detailed Description Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Ve...
Datasheet PDF File 11N06LT PDF File

11N06LT
11N06LT

Overview
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics www.
DataSheet4U.
com • High thermal cycling performance • Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHB11N06LT is supplied in the SOT404 surface mounting package.
The PHD11N06LT is supplied in the SOT428 surface mounting package.
PINNING PIN 1 2 3 tab gate drain 1 source DESCRIPTION SOT428 tab SOT404 tab 2 2 3 drain 1 1 3 LIMITING VALUES Limiting values in accordance with the Absolute M...


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