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3S1265R

Fairchild Semiconductor
Part Number 3S1265R
Manufacturer Fairchild Semiconductor
Description KA3S1265R
Published Sep 21, 2008
Detailed Description www.fairchildsemi.com KA3S1265R/KA3S1265RF/ KA3S1265RD Fairchild Power Switch(FPS) Features • • • • • • • • • Wide oper...
Datasheet PDF File 3S1265R PDF File

3S1265R
3S1265R

Overview
www.
fairchildsemi.
com KA3S1265R/KA3S1265RF/ KA3S1265RD Fairchild Power Switch(FPS) Features • • • • • • • • • Wide operatimg frequency range up to (150kHz) Pulse by pulse over current limiting Over load protection Over voltage protecton (Min.
23V) Internal thermal shutdown function Under voltage lockout Internal high voltage sense FET External sync terminal Auto Restart Mode Description The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components.
The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC.
Included control IC features a trimmed oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit.
compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability.
It has a basic platform well suited for cost-effective C-TV power supply.
TO-3P-5L www.
DataSheet4U.
com TO-3PF-5L 1 1 1.
DRAIN 2.
GND 3.
Vcc 4.
FB 5.
Sync Internal Block Diagram #3 VCC 32V 5V Vref − 5V + 6.
4V #4 FB − 1mA 2.
5R 1R 9V + 7.
5V − + 25V − Thermal S/D OVER VOLTAGE S/D + OSC S R 2µA L.
E.
B 0.
1V S R Q #2 GND Q Good logic Internal bias #1 DRAIN SFET #5 Sync Power on reset Rev.
1.
0.
2 ©2001 Fairchild Semiconductor Corporation KA3S1265R/KA3S1265RF/KA3S1265RD Absolute Maximum Ratings Characteristic Maximum drain voltage (1) Symbol VD,MAX VDGR VGS IDM (3) Value 650 650 ±30 48.
0 785 12 8.
4 30 −0.
3 to VSD 269 2.
17 −25 to +85 −55 to +150 Unit V V V ADC mJ ADC ADC V V W W/°C °C °C Drain-gate voltage (RGS=1MΩ) Gate-source (GND) voltage Drain current pulsed (2) Single pulsed avalanche energy EAS ID ID VCC,MAX VFB PD Continuous ...


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