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G4PC40W

IRF
Part Number G4PC40W
Manufacturer IRF
Description IRG4PC40W
Published Sep 27, 2008
Detailed Description PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features www.DataSheet4U.com C • Designed expressly for Switch-...
Datasheet PDF File G4PC40W PDF File

G4PC40W
G4PC40W

Overview
PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features www.
DataSheet4U.
com C • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V G E VCE(on) typ.
= 2.
05V @VGE = 15V, IC = 20A n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 2...


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