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UPF1010

CREE
Part Number UPF1010
Manufacturer CREE
Description Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
Published Sep 29, 2008
Detailed Description UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base stati...
Datasheet PDF File UPF1010 PDF File

UPF1010
UPF1010

Overview
UPF1010 10W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 1GHz.
Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or AB operation.
• Industry standard package.
• Low intermodulation distortion of–30dBc at 10W (PEP).
www.
DataSheet4U.
com • Gold Metalization, Gold Bond Wires, Gold-Plated Packages.
4 Package Type 440095 UPF1010F Package Type 440109 UPF1010P 4-1 UPF1010 Maximum Ratings Rating Drain to Source Voltage, gate connected to source www.
DataSheet4U.
com Gate to Source Voltage Total Device Dissipation @ Tcase = 70°C Derate above 70°C Symbol VDSS VGS PD TSTG TJ Value 65 +/- 20 Unit Volts Volts Watts W/°C °C °C 20 0.
2 -65 to +150 200 4 Storage Temperature Range Operating Junction Temperature Thermal Characteristics Characteristics Thermal Resistance, Junction to Case Symbol ΘJC Maximum 3.
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2...


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