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K3397

Toshiba
Part Number K3397
Manufacturer Toshiba
Description 2SK3397
Published Sep 29, 2008
Detailed Description 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3397 Relay Drive and DC-DC Converter Ap...
Datasheet PDF File K3397 PDF File

K3397
K3397

Overview
2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z z Low drain-source ON resistance: RDS (ON) = 4.
0 mΩ (typ.
) High forward transfer admittance: |Yfs| = 110 S (typ.
) Unit: mm z Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) www.
DataSheet4U.
com z Enhancement mode: Vth = 1.
5 to 3.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 70 210 125 273 70 12.
5 150 −55 to150 Unit V V V A W mJ A...


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