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P30N60T

Infineon Technologies
Part Number P30N60T
Manufacturer Infineon Technologies
Description IGP30N60T
Published Oct 7, 2008
Detailed Description TrenchStop Series IGP30N60T IGW30N60T Low Loss IGBT in Trench and Fieldstop technology • • • • • Very low VCE(sat) 1.5...
Datasheet PDF File P30N60T PDF File

P30N60T
P30N60T

Overview
TrenchStop Series IGP30N60T IGW30N60T Low Loss IGBT in Trench and Fieldstop technology • • • • • Very low VCE(sat) 1.
5 V (typ.
) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution P-TO-220-3-1 (TO-220AB) - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ VCE 600V 600V IC 30A 30A VCE(sat),Tj=25°C 1.
5V 1.
5V Tj,max 175°C 175°C Marking Code G30T60 G30T60 Package TO-220 TO-247 C G E www.
DataSheet4U.
com P-TO-247-3-1 (TO-220AC) • • • • Type IGP30N60T IGW30N60T Ordering Code Q67040S4722 Q67040S4724 Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Gate-emitter voltage Short circuit withstand time 1) Symbol VCE IC Value 600 60 30 Unit V A ICpuls VGE tSC Ptot Tj Tstg - 90 90 ±20 5 187 -40.
.
.
+175 -55.
.
.
+175 260 V µs W °C VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1 Rev.
2.
2 Dec-04 Power Semiconductors TrenchStop Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient RthJA P-TO-220-3-1 P-TO-247-3-1 RthJC Symbol Conditions IGP30N60T IGW30N60T Max.
Value 0.
80 62 40 Unit K/W www.
DataSheet4U.
com Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation...


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