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STJ004SF

Part Number	STJ004SF
Manufacturer	AUK
Description	P-channel Trench MOSFET
Published	Oct 9, 2008
Detailed Description	Semiconductor STJ004SF P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VG...
Datasheet	STJ004SF PDF File

Overview

Semiconductor STJ004SF P-channel Trench MOSFET Portable Equipment Application.
Notebook Application.
Features • Low VGS(th) : VGS(th)=-0.
7~-1.
4V • Small footprint due to small package • Low RDS (ON) : RDS (ON)= 61mΩ (Typ.
) www.
DataSheet4U.
com Ordering Information Type NO.
STJ004SF Marking J04 Package Code SOT-23F Outline Dimensions unit : mm 2.
30~2.
50 1.
50~1.
70 1 2.
80~3.
00 1.
90 Typ.
3 0.
45 Max.
Block Diagram D 2 G 0.
80~1.
00 0.
10 Max.
0.
20 Max.
S ㅋ PIN 1.
2.
3.
Connections Gate Source Drain KSD-T5C045-000 1 STJ004SF Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) ** * ** (Ta=25°C) Symbol VDSS VGSS ID IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating -30 ±12 -2.
4 -9.
6 0.
35 -2.
4 13 -2.
4 1.
1 150 -55~150 Unit V V A A W A mJ A mJ °C Drain current (Pulsed) www.
DataSheet4U.
com Total Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ** Device mounted on a glass-epoxy board Characteristic Thermal resistance Junction-ambient Symbol Rth(J-a) ** Typ.
- Max 357 Unit ℃/W KSD-T5C045-000 2 STJ004SF P-CH Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ (Ta=25°C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=-250μA, VGS=0 ID=-250μA, VDS=VGS VDS=-20V, VGS=0V VDS=0V, VGS=±12V VGS=-4.
5V, ID=-1.
2A VGS=-2.
5V, ID=-1.
2A VDS=-5V, ID=-2.
4A VGS=0V, VDS=-10V, f=1MHz Min.
-30 -0.
7 - Typ.
61 86 13.
2 398 82 46 11 5.
3 7.
6 5.
3 6.
4 2.
8 1.
7 Max.
-1.
4 1 ±100 91...

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