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LD1003S

Part Number	LD1003S
Manufacturer	Lovoltech
Description	High Performance N-Channel POWERJFET
Published	Oct 15, 2008
Detailed Description	PWRLITE LD1003S High Performance N-Channel POWERJFETTM with Schottky Diode Features Trench Power JFET with low thresho...
Datasheet	LD1003S PDF File

Overview

PWRLITE LD1003S High Performance N-Channel POWERJFETTM with Schottky Diode Features Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.
7V Optimum for “Low Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC Low Rg and low Cds for high speed switching www.
DataSheet4U.
com No “Body Diode”; extremely low Cds Added Fast Recovery Schottky Diode in same package Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications.
The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time.
The transistor “No Body Diode” provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling diode is required.
Ringing is also reduced so that a lower voltage device may be a better solution.
Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules DPAK Pin Assignments D 4 G 2 3 Case TO252 DPAK (LD1003S) (Surface Mount) 1 S N – Channel JFET And Schottky Diode Pin Definitions Pin Number 1 2, 4 3 Pin Name Gate Drain Source Pin Function Description Gate.
Transistor Gate Drain.
Transistor Drain Source.
Transistor Source VDS (V) 24V Product Summary Rdson (Ω) 0.
0045 ID (A) 50 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 5VDC, IL=60APK, L=0.
3mH, RG=100 Ω) Junction Temperature Storage Temperature Lead Soldering Temperature, 10 seconds Power Dissipation (Derated at 25°C) Symbol VDS VGS VGD ID ID EAS TJ TSTG T PD Ratings 24 -10 -28 50 100 220 -55 to 1...

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LD1003S High Performance N-Channel POWERJFET - Lovoltech

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