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BTD2118LJ3

Cystech Electonics
Part Number BTD2118LJ3
Manufacturer Cystech Electonics
Description NPN Epitaxial Planar Transistor
Published Oct 15, 2008
Detailed Description CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Spec. No. : C850J3 Issued Date : 2004.0...
Datasheet PDF File BTD2118LJ3 PDF File

BTD2118LJ3
BTD2118LJ3

Overview
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Spec.
No.
: C850J3 Issued Date : 2004.
02.
27 Revised Date :2006.
07.
04 Page No.
: 1/5 Features • Low VCE(sat), VCE(sat)=0.
2V (typical), at IC / IB = 3A / 0.
1A • Excellent DC current gain characteristics • Complementary to BTB1412LJ3 • Pb-free package Symbol BTD2118LJ3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : 1.
Single Pulse Pw≦350µs, Duty≦2%.
Symbol VCBO VCEO VEBO IC ICP PD(TA=25℃) PD(TC=25℃) Tj Tstg Limits 40 15 6 5 8 (Note 1) 1 10 150 -55~+150 Unit V V V A A W W °C °C BTD2118LJ3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C850J3 Issued Date : 2004.
02.
27 Revised Date :2006.
07.
04 Page No.
: 2/5 Characteristics (Ta=25°C) Symbol Min.
Typ...


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