DatasheetsPDF.com

GP30B120KD-E

International Rectifier
Part Number GP30B120KD-E
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Oct 23, 2008
Detailed Description PD- 93818 IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE(on) No...
Datasheet PDF File GP30B120KD-E PDF File

GP30B120KD-E
GP30B120KD-E

Overview
PD- 93818 IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE(on) Non Punch Through (NPT) Technology • Low Diode VF (1.
76V Typical @ 25A & 25°C) www.
DataSheet4U.
com • 10 µs Short Circuit Capability • Square RBSOA • Ultrasoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package C Motor Control Co-Pack IGBT VCES = 1200V G E VCE(on) typ.
= 2.
28V VGE = 15V, IC = 25A, 25°C N-channel Benefits • Benchmark Efficiency for Motor Control Applications • Rugged Transient Performance • Low EMI • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation • Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.
1) Continuous Collector Current (Fig.
1) Pulsed Collector Current (Fig.
3, Fig.
CT.
5) Clamped Inductive Load Current(Fig.
4, Fig.
CT.
2) Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (Fig.
2) Maximum Power Dissipation (Fig.
2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw.
Max.
1200 60 30 120 120 30 120 ± 20 300 120 -55 to + 150 300, (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt ZθJC Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case Min.
––– ––– ––– ––– ––– (Fig.
24) Typ.
––– ––– 0.
24 ––– 6 (0.
21) Max.
0.
42 0.
83 ––– 40 ––– Units °C/W g (oz) www.
irf.
com 1 12/14/99 IRGP30B120KD-E Electrical C haracteristics @ TJ = 25°C (unless otherw ise specified) P a ra m e te r V (B R )C E S C o lle cto r-to -E...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)