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STK7002B

AUK
Part Number STK7002B
Manufacturer AUK
Description N-Channel Enhancement-Mode MOSFET
Published Oct 23, 2008
Detailed Description Semiconductor STK7002B N-Channel Enhancement-Mode MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVD...
Datasheet PDF File STK7002B PDF File

STK7002B
STK7002B

Overview
Semiconductor STK7002B N-Channel Enhancement-Mode MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=60V(Min.
) • Low Crss : Crss=3.
1pF(Typ.
) • Low gate charge : Qg=2.
8nC(Typ.
) • Low RDS(on) :RDS(on)=2.
8Ω(Typ.
) www.
DataSheet4U.
com Ordering Information Type NO.
STK7002B Marking 72B Package Code SOT-23 Outline Dimensions unit : mm 1 3 2 PIN Connections 1.
Gate 2.
Source 3.
Drain KSD-T5C042-000 1 STK7002B Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) www.
DataSheet4U.
com * ** (Ta=25°C) Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 60 ±20 380 240 1.
52 350 380 3.
8 380 0.
1 150 -55~150 Unit V V mA mA A mW mA mJ mA mJ °C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ** Device mounted on 99.
5% Alumina 10 x 8 x 0.
6mm Characteristic Thermal resistance Junction-ambient Symbol Rth(J-a) Typ.
- Max 357 Unit ℃/W KSD-T5C042-000 2 STK7002B Electrical Characteristics Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance www.
DataSheet4U.
com Forward transfer admittance (Ta=25°C) Symbol BVDSS VGS(th) IDSS IGSS ④ ④ RDS(ON) RDS(ON) gfs Ciss Coss Crss td(on) td(off) Qg Qgs Qgd Test Condition ID=10μA, VGS=0 ID=250μA, VDS= VGS VDS=60V, VGS=0V VDS=0V, VGS=±20V VGS=5V, ID=50mA VGS=10V, ID=180mA VDS=3V, ID=180mA VGS=0V, VDS=25V, f=1MHz Min.
60 1.
0 - Typ.
2.
8 2.
7 Max.
2.
5 1 ±100 4.
2 4.
0 Unit V V μA nA Ω mS - 353 20 7.
8 3.
1 7 11 2.
8 0.
4 0.
2 30 11.
7 4.
7 10.
5 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-off delay time Total gate charge Gate-source charge Gate-drain charge pF VDD=30V, VGS=10V ID=380mA, RG=25Ω - ns ③...


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