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FPD750P100

Part Number	FPD750P100
Manufacturer	Filtronic Compound Semiconductors
Description	0.5W PACKAGED POWER PHEMT
Published	Oct 25, 2008
Detailed Description	0.5W PACKAGED POWER PHEMT • FEATURES ♦ 26.5 dBm Linear Output Power ♦ 18.5 dB Power Gain at 2 GHz ♦ 11.5 dB Maximum Stab...
Datasheet	FPD750P100 PDF File

Overview

0.
5W PACKAGED POWER PHEMT • FEATURES ♦ 26.
5 dBm Linear Output Power ♦ 18.
5 dB Power Gain at 2 GHz ♦ 11.
5 dB Maximum Stable Gain at 10 GHz ♦ 36 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz FPD750P100 www.
DataSheet4U.
com • DESCRIPTION AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.
25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography.
The recessed and offset Gate structure minimizes parasitics to optimize performance.
The epitaxial structure and processing have been optimized for reliable high-power applications.
The FPD750P100 also features Si3N4 passivati...

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FPD750P100 0.5W PACKAGED POWER PHEMT - Filtronic Compound Semiconductors

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