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SFP60N03L

SemiWell Semiconductor
Part Number SFP60N03L
Manufacturer SemiWell Semiconductor
Description Logic N-Channel MOSFET
Published Nov 3, 2008
Detailed Description SemiWell Semiconductor SFP60N03L Logic N-Channel MOSFET Features ■ ■ Low RDS(on) (0.0135Ω )@VGS=10V Low Gate Charge (...
Datasheet PDF File SFP60N03L PDF File

SFP60N03L
SFP60N03L

Overview
SemiWell Semiconductor SFP60N03L Logic N-Channel MOSFET Features ■ ■ Low RDS(on) (0.
0135Ω )@VGS=10V Low Gate Charge (Typical 21.
5nC) Low Crss (Typical 130pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) Symbol ◀ { { 2.
Drain ● www.
DataSheet4U.
com ■ ■ ■ ■ 1.
Gate ▲ ● ● { 3.
Source General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics.
This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
TO-220 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 3) (Note 1) Parameter Value 30 60 43 240 Units V A A A V mJ V/ns W W/°C °C °C ±20 270 7.
0 100 0.
67 - 55 ~ 175 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min.
- Typ.
0.
5 - Max.
1.
50 62.
5 Units °C/W °C/W °C/W September, 2002.
Rev.
0.
Copyright@SemiWell Semiconductor Co.
, Ltd.
, All rights reserved.
1/7 SFP60N03L Electrical Characteristics Symbol Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 30 0.
02 1 10 100 -100 V V/°C uA uA nA nA Δ BVDSS/ Δ TJ IDSS ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units www.
DataSheet4U.
com ...


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