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IXGT28N60B

Part Number	IXGT28N60B
Manufacturer	IXYS Corporation
Description	Ultra-low V Ce(sat) Igbt
Published	Nov 3, 2008
Detailed Description	Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data...
Datasheet	IXGT28N60B PDF File

Overview

Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.
0 V Preliminary data Symbol www.
DataSheet4U.
com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.
8 VCES 150 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C Nm/lb.
in.
°C g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E G = Gate, E = Emitter, TAB C = Collector, TAB = Collector Mounting torque (M3) TO-247 1.
...

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