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STS7NF60L

Part Number	STS7NF60L
Manufacturer	STMicroelectronics
Description	N-CHANNEL POWER MOSFET
Published	Nov 7, 2008
Detailed Description	N-CHANNEL 60V - 0.017 Ω - 7.5A SO-8 STripFET™ II POWER MOSFET TYPE STS7NF60L www.DataSheet4U.com s TYPICAL s STS7NF60L ...
Datasheet	STS7NF60L PDF File

Overview

N-CHANNEL 60V - 0.
017 Ω - 7.
5A SO-8 STripFET™ II POWER MOSFET TYPE STS7NF60L www.
DataSheet4U.
com s TYPICAL s STS7NF60L VDSS 60 V RDS(on) < 0.
0195 Ω ID 7.
5 A s RDS(on) = 0.
017 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Ptot EAS (1) April 2002 .
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Single Pulse Avalanche Energy Value 60 60 ± 16 7.
5 4.
7 30 2.
5 350 (1) Starting T j = 25 oC, ID = 7.
5 A VDD = 30 V Unit V V V A A A W mJ (•) Pulse width limited by safe operating area.
1/8 STS7NF60L THERMAL DATA Rthj-amb(#) Tj Tstg Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature Max 50 150 -55 to 150 °C/W °C °C (#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol www.
DataSheet4U.
com Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 16 V Min.
60 Typ.
Max.
Unit V V(BR)DSS IDSS 1 10 ±100 µA µA nA IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance T...

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STS7NF60L N-CHANNEL POWER MOSFET - STMicroelectronics

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