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SB073P200-W-AL

TRANSYS Electronics Limited
Part Number SB073P200-W-AL
Manufacturer TRANSYS Electronics Limited
Description Schottky Barrier Diode Wafer
Published Nov 7, 2008
Detailed Description SB073P200-W-Ag/Al Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp Data Sheet Features Oxide Passivated Junction L...
Datasheet PDF File SB073P200-W-AL PDF File

SB073P200-W-AL
SB073P200-W-AL

Overview
SB073P200-W-Ag/Al Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp Data Sheet Features Oxide Passivated Junction Low Forward Voltage 150 ยบ C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 1.
Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2.
Wire Bond Surface Aluminium - Suffix "Al" Anode www.
DataSheet4U.
com Solderable Surface Ti/Ni/Ag Cathode Cathode Symbol Electrical Characteristics @ 25 C Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current (2) Reverse Leakage Current @ 125 C (2) Junction Operating Temperature Range (2) Storage Temperature Range (2) Symbol Unit VRRM VF...


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