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OD-880-C

OptoDiode
Part Number OD-880-C
Manufacturer OptoDiode
Description HIGH-POWER GaAlAs IR EMITTER CHIPS
Published Nov 11, 2008
Detailed Description HIGH-POWER GaAlAs IR EMITTER CHIPS FEATURES OD-880-C .014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap...
Datasheet PDF File OD-880-C PDF File

OD-880-C
OD-880-C

Overview
HIGH-POWER GaAlAs IR EMITTER CHIPS FEATURES OD-880-C .
014 • High reliability LPE GaAlAs IRLED chips • Graded-bandgap LED structure for high radiant power output .
014 • 880nm peak emission • Good bondability • Good ohmic contacts (gold alloys) EMITTING SURFACE www.
DataSheet4U.
com GOLD CONTACTS .
006 N P .
003 .
005 All dimensions are nominal values in inches unless otherwise specified.
RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Forward Voltage, VF Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 100mA IF = 20mA IF = 50mA IF = 100mA IR = 10MA VR = 0V 5 MIN 8 TYP 14 2 880 80 30 17 MAX UNITS mW nm 1.
9 Volts Volts Msec Msec pF nm Reverse Breakdown Voltage, VR 1.
55 0.
5 0.
5 ABSOLUTE MAXIMUM RATINGS AT 25°C Power Dissipation Continuous Forward Current Reverse Voltage 190mW 100mA 5V 3A Peak Forward Current (10Ms, 300 Hz) Storage and Operating Temperature Range Maximum Junction Temperature -65°C to 150°C 150°C The exact performance data depends on your package configuration and technique.
Data listed in this specification is for the chip mounted on a TO-46 header using silver epoxy as the die attach material.
All sales are final after 60 days from the shipment date.
Opto Diode must be notified of any discrepancies within this period.
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.
com, Website: www.
optodiode.
com ...


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