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ASI3005

Advanced Semiconductor
Part Number ASI3005
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Nov 17, 2008
Detailed Description ASI3005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The is Designed for General Purpose Class C Power Amplifier Applic...
Datasheet PDF File ASI3005 PDF File

ASI3005
ASI3005


Overview
ASI3005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz.
B PACKAGE STYLE .
250 2L FLG A ØD C E .
060 x 45° CHAMFER www.
DataSheet4U.
com FEATURES: • PG = 4.
5 dB min.
at 5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .
028 / 0.
71 .
740 / 18.
80 .
245 / 6.
22 .
128 / 3.
25 .
125 / 3.
18 .
110 / 2.
79 .
117 / 2.
97 .
560 / 14.
22 .
790 / 20.
07 .
225 / 5.
72 .
165 / 4.
19 .
003 / 0.
08 .
058 / 1.
47 .
119 / 3.
02 .
149 / 3.
78 .
032 / 0.
81 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC O O B C D E F .
255 / 6.
48 .
132 / 3.
35 700 mA 30 V 17.
6 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 8.
5 C/W O O O O .
117 / 2.
97 G H I J K L M N P .
570 / 14.
48 .
810 / 20.
57 .
235 / 5.
97 .
185 / 4.
70 .
007 / 0.
18 .
068 / 1.
73 .
135 / 3.
43 .
187 / 4.
75 ORDER CODE: ASI10540 O CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE Cob PG ηC TC = 25 C NONETEST CONDITIONS IC = 1.
0 mA IC = 5.
0 mA IE = 10 mA VCB = 28 V VCE = 5.
0 V VCB = 28 V VCC = 28 V POUT = 5.
0 W IC = 500 mA f = 1.
0 MHz f = 3.
0 GHz RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.
5 0.
5 300 300 7.
5 4.
5 30 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
REV.
A 1/1 ...


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