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GS8161E18B

GSI Technology
Part Number GS8161E18B
Manufacturer GSI Technology
Description (GS8161E18B - GS8161E36B) Sync Burst SRAMs
Published Nov 17, 2008
Detailed Description GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp Features • FT ...
Datasheet PDF File GS8161E18B PDF File

GS8161E18B
GS8161E18B

Overview
GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.
1 JTAG-compatible Boundary Scan • 2.
5 V or 3.
3 V +10%/–10% core power supply • 2.
5 V or 3.
3 V I/O supply www.
DataSheet4U.
com • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to Interleaved Pipeline mode • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 100-lead TQFP package • RoHS-compliant 100-lead TQFP and 165-bump BGA packages available 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 250 MHz–150 MHz 2.
5 V or 3.
3 V VDD 2.
5 V or 3.
3 V I/O Linear Burst Order (LBO) input.
The Burst function need not be used.
New addresses can be loaded on every cycle with no degradation of chip pe...


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