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NE461M02

NEC
Part Number NE461M02
Manufacturer NEC
Description NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Published Nov 17, 2008
Detailed Description NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES HIGH COLLECTOR CURRENT: 250 mA MAX • N...
Datasheet PDF File NE461M02 PDF File

NE461M02
NE461M02

Overview
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES HIGH COLLECTOR CURRENT: 250 mA MAX • NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) • HIGH OUTPUT POWER AT 1 dB COMPRESSION: www.
DataSheet4U.
com 27 dBm TYP at 1 GHz • HIGH IP3: 37 dBm TYP at 1 GHz • NE461M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02 BOTTOM VIEW 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 DESCRIPTION The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion.
This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and di...


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