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BUK7225-55A

NXP Semiconductors
Part Number BUK7225-55A
Manufacturer NXP Semiconductors
Description TrenchMOS standard level FET
Published Nov 17, 2008
Detailed Description BUK7225-55A TrenchMOS™ standard level FET Rev. 01 — 17 April 2001 M3D300 Product specification 1. Description www.DataS...
Datasheet PDF File BUK7225-55A PDF File

BUK7225-55A
BUK7225-55A

Overview
BUK7225-55A TrenchMOS™ standard level FET Rev.
01 — 17 April 2001 M3D300 Product specification 1.
Description www.
DataSheet4U.
com N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability: BUK7225-55A in SOT428 (D-PAK).
2.
Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible.
3.
Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
c c 4.
Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) mb d Simplified outline Symbol drain (d) source (s) drain (d) MBB076 g s 2 1 Top view 3 MBK091 SOT428 (D-PAK) 1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors BUK7225-55A TrenchMOS™ standard level FET 5.
Quick reference data Table 2: VDS ID Ptot Tj RDSon www.
DataSheet4U.
com Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C 21 − 25 50 Typ − − − − Max 55 43 94 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter mΩ mΩ 6.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IDR IDRM WDSS drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 43 A; VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω; starting T j = 25 °C Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤...


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