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STD4NC50

STMicroelectronics
Part Number STD4NC50
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Nov 17, 2008
Detailed Description N-CHANNEL 500V - 1.3Ω - 3.7A DPAK/IPAK PowerMesh™II MOSFET TYPE STD4NC50 STD4NC50-1 www.DataSheet4U.com s s s s s STD4N...
Datasheet PDF File STD4NC50 PDF File

STD4NC50
STD4NC50

Overview
N-CHANNEL 500V - 1.
3Ω - 3.
7A DPAK/IPAK PowerMesh™II MOSFET TYPE STD4NC50 STD4NC50-1 www.
DataSheet4U.
com s s s s s STD4NC50 STD4NC50-1 VDSS 500V 500V RDS(on) <1.
5Ω <1.
5Ω ID 3.
7A 3.
7A TYPICAL RDS(on) = 1.
3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 1 3 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
DPAK (NO SUFFIX) IPAK (SUFFIX“-1”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITH MODE LOW POWER SUPPLIES (SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (*) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature Value 500 500 ±30 3.
7 2.
3 14.
8 50 0.
4 3 –65 to 150 150 (1)ISD ≤ 3.
7A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX.
Unit V V V A A A W W/°C V/ns °C °C (•)Pulse width limited by safe operating area August 2001 1/9 STD4NC50/-1 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.
5 100 275 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS a Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy h e e t T 4j =U c IDo= Im 25 .
°C, (starting AR, V DD = 50 V) Max Value 3.
7 220 Unit A mJ w w w .
D a t S ELECTRICAL CHARACTERISTICS (TCASE = 25 °C...


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