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STB4NB50

STMicroelectronics
Part Number STB4NB50
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Nov 18, 2008
Detailed Description ® STB4NB50 N - CHANNEL 500V - 2.5Ω - 3.8A - D2PAK/I2PAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB4NB50 www.DataSheet...
Datasheet PDF File STB4NB50 PDF File

STB4NB50
STB4NB50

Overview
® STB4NB50 N - CHANNEL 500V - 2.
5Ω - 3.
8A - D2PAK/I2PAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB4NB50 www.
DataSheet4U.
com s s s s s V DSS 500 V R DS(on) < 2.
8 Ω ID 3.
8 A TYPICAL RDS(on) = 2.
5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 12 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s I2PAK TO-262 (suffix "-1") D2PAK TO-263 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM (• ) P tot dv/dt( 1 ) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature o o Value 500 500 ± 30 3.
8 2.
4 15.
2 80 0.
64 4.
5 -65 to 150 150 ( 1) ISD ≤ 4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C (•) Pulse width limited by safe operating area October 1998 1/8 STB4NB50 THERMAL DATA R thj-case Rthj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.
56 62.
5 0.
5 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol IAR www.
DataSheet4U.
com Parameter Avalanche Curre...


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