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PLVA656A

NXP
Part Number PLVA656A
Manufacturer NXP
Description Low-voltage Avalanche Regulator Diodes
Published Nov 18, 2008
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com book, halfpage M3D088 PLVA600A series Low-voltage avalanche re...
Datasheet PDF File PLVA656A PDF File

PLVA656A
PLVA656A

Overview
DISCRETE SEMICONDUCTORS DATA SHEET www.
DataSheet4U.
com book, halfpage M3D088 PLVA600A series Low-voltage avalanche regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 25 Philips Semiconductors Product specification Low-voltage avalanche regulator diodes FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: approximately 1⁄10 of conventional series www.
DataSheet4U.
com • Total power dissipation: max.
250 mW • Small tolerances of VZ • Working voltage range: nom.
5.
0 to 6.
8 V • Non-repetitive peak reverse power dissipation: max.
30 W.
Top view PLVA600A series PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION handbook, halfpage 2 1 2 n.
c.
3 3 1 MAM243 APPLICATIONS • Low current, low power, low noise applications • CMOS RAM back-up circuits • Voltage stabilizers • Voltage limiters • Smoke detector relays.
DESCRIPTION High performance voltage regulator diodes in small SOT23 plastic SMD packages.
The series consists of PLVA650A to PLVA668A.
Note MARKING Fig.
1 Simplified outline (SOT23) and symbol.
TYPE NUMBER PLVA650A PLVA653A PLVA656A PLVA659A PLVA662A PLVA665A PLVA668A 1.
∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
MARKING CODE(1) ∗9A ∗9B ∗9C ∗9D ∗9E ∗9F ∗9G LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL IF IZRM PZSM Ptot Tstg Tj Note 1.
Device mounted on an FR4 printed circuit-board.
1999 May 25 2 PARAMETER continuous forward current repetitive peak working current total power dissipation storage temperature junction temperature tp = 100 µs; δ = 10% Tamb = 25 °C; note 1 − −65 − non-repetitive peak reverse power dissipation tp = 100 µs; Tj = 150 °C CONDITIONS − MIN.
MAX.
250 250 30 250 +150 150 UNIT mA mA W mW °C °C Philips Semiconductors Product specification Low-voltage avalanche regulator diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL VF VZ www.
DataSheet4U.
com ...


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