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STU11NB60

STMicroelectronics
Part Number STU11NB60
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Nov 19, 2008
Detailed Description ® STU11NB60 N-CHANNEL 600V - 0.5Ω - 11A - Max220 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STU11NB60 com...
Datasheet PDF File STU11NB60 PDF File

STU11NB60
STU11NB60

Overview
... s s s s s s V DSS 600 V R DS(on) < 0.
6 Ω ID 11 A TYPICAL RDS(on) = 0.
5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V GATE TO SOURCE VOLTAGE RATING 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTE...


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