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STP3N62K3

STMicroelectronics
Part Number STP3N62K3
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Nov 19, 2008
Detailed Description STB3N62K3, STP3N62K3 Datasheet N-channel 620 V, 2.2 Ω typ., 2.7 A MDmesh™ K3 Power MOSFETs in D2PAK and TO-220 packages ...
Datasheet PDF File STP3N62K3 PDF File

STP3N62K3
STP3N62K3

Overview
STB3N62K3, STP3N62K3 Datasheet N-channel 620 V, 2.
2 Ω typ.
, 2.
7 A MDmesh™ K3 Power MOSFETs in D2PAK and TO-220 packages Features TAB Order code VDS RDS(on)max.
ID Package TAB t(s) 3 1 c D2PAK TO-220 1 23 Produ D(2, TAB) olete G(1) - Obs S(3) AM01475V1 roduct(s) Product status link te P STB3N62K3 Obsole STP3N62K3 STB3N62K3 STP3N62K3 620 V 2.
5 Ω • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected 2.
7 A D2PAK TO-220 Applications • Switching applications Description These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure.
These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
DS12625 - Rev 1 - July 2018 For further information contact your local STMicroelectronics sales office.
www.
st.
com STB3N62K3, STP3N62K3 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 620 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C ) ID Drain current (continuous) at TC = 100 °C t(s IDM (1) Drain current (pulsed) uc PTOT Total dissipation at TC = 25 °C rod ESD Gate-source human body model (C = 100 pF, R = 1.
5 kΩ) P dv/dt (2) Peak diode recovery voltage slope te Tj Operating junction temperature range le Tstg Storage temperature range so 1.
Pulse width limited by safe operating area.
b 2.
ISD ≤ 2.
7 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
2.
7 1.
7 10.
8 45 2.
5 9 -55 to 150 t(s) - O Table 2.
Thermal data c Symbol Parameter rodu Rthj-case Thermal resistance junction-case P Rthj-amb Thermal resistance junction-ambient te Rthj-pcb(1) Thermal resistance junction-pcb le 1.
When mounted on 1inch...


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