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BCR8KM-14LC

Renesas Technology
Part Number BCR8KM-14LC
Manufacturer Renesas Technology
Description Triac
Published Nov 19, 2008
Detailed Description BCR8KM-14LC Triac Medium Power Use REJ03G0334-0200 Rev.2.00 Dec.17.2004 Features • IT (RMS) : 8 A • VDRM : 700 V www.Da...
Datasheet PDF File BCR8KM-14LC PDF File

BCR8KM-14LC
BCR8KM-14LC

Overview
BCR8KM-14LC Triac Medium Power Use REJ03G0334-0200 Rev.
2.
00 Dec.
17.
2004 Features • IT (RMS) : 8 A • VDRM : 700 V www.
DataSheet4U.
com • IFGTI , IRGTI, IRGT : 50 mA • Viso : 2000 V • The product guaranteed maximum junction temperature 150°C.
• Insulated Type • Planar Passivation Type Outline TO-220FN 2 1.
T1 Terminal 2.
T2 Terminal 3.
Gate Terminal 3 1 1 2 3 Applications Motor control, heater control Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 14 700 800 Unit V V Rev.
2.
00, Dec.
17.
2004, page 1 of 7 BCR8KM-14LC Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass www.
DataSheet4U.
com Isolation voltage Notes: 1.
Gate open.
Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 8 48 9.
5 5 0.
5 10 2 – 40 to +150 – 40 to +150 2.
0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 98°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min.
— — — — — — — — 0.
2 — 10 Typ.
— — — — — — — — — — — Max.
2.
0 2.
0 1.
5 1.
5 1.
5 50 50 50 — 3.
9 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Not...


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