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LH28F800SGH-L

Sharp Electrionic Components
Part Number LH28F800SGH-L
Manufacturer Sharp Electrionic Components
Description 8 M-bit (512 kB x 16) SmartVoltage Flash Memories
Published Mar 22, 2005
Detailed Description LH28F800SG-L/SGH-L (FOR TSOP, CSP) LH28F800SG-L/SGH-L (FOR TSOP, CSP) DESCRIPTION The LH28F800SG-L/SGH-L flash memories...
Datasheet PDF File LH28F800SGH-L PDF File

LH28F800SGH-L
LH28F800SGH-L

Overview
LH28F800SG-L/SGH-L (FOR TSOP, CSP) LH28F800SG-L/SGH-L (FOR TSOP, CSP) DESCRIPTION The LH28F800SG-L/SGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.
The LH28F800SG-L/SGH-L can operate at VCC = 2.
7 V and VPP = 2.
7 V.
Their low voltage operation capability realizes longer battery life and suits for cellular phone application.
Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards.
Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications.
For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F800SG-L/SGH-L offer three levels of protection : absolute protection with VPP at GND, selective hardware block locking, or flexible software block locking.
These alternatives give designers ultimate control of their code security needs.
8 M-bit (512 kB x 16) SmartVoltage Flash Memories FEATURES • SmartVoltage technology – 2.
7 V, 3.
3 V or 5 V VCC – 2.
7 V, 3.
3 V, 5 V or 12 V VPP • High performance read access time LH28F800SG-L70/SGH-L70 – 70 ns (5.
0±0.
25 V)/80 ns (5.
0±0.
5 V)/ 85 ns (3.
3±0.
3 V)/100 ns (2.
7 to 3.
0 V) LH28F800SG-L10/SGH-L10 – 100 ns (5.
0±0.
5 V)/100 ns (3.
3±0.
3 V)/ 120 ns (2.
7 to 3.
0 V) • Enhanced automated suspend options – Word write suspend to read – Block erase suspend to word write – Block erase suspend to read • Enhanced data protection features – Absolute protection with VPP = GND – Flexible block locking – Block erase/word write lockout during power transitions • SRAM-compatible write interface • High-density symmetrically-blocked architecture – Sixteen 32 k-word erasable blocks • Enhanced cycling capability – 100 000 block erase cycles – 1.
6 million block erase cycles/chip • Low power management ...


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