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H7P1002DS

Renesas Technology
Part Number H7P1002DS
Manufacturer Renesas Technology
Description Silicon P Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Feature...
Datasheet PDF File H7P1002DS PDF File

H7P1002DS
H7P1002DS

Overview
H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.
1.
00 Nov 16, 2007 Features • Low on-resistance RDS(on) = 85 mΩ typ.
www.
DataSheet4U.
com • Low drive current • 4.
5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 1 2 3 G 1.
Gate 2.
Drain 3.
Source 4.
Drain H7P0601DS 1 2 3 S H7P0601DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Rating –100 ±20 –15 –60 –15 –12 14.
4 30 150 –55 to +150 Unit V V A A A A mJ W °C °C REJ03G16...


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