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H5N2306PF

Part Number	H5N2306PF
Manufacturer	Renesas Technology
Description	Silicon N Channel MOS FET High Speed Power Switching
Published	Nov 20, 2008
Detailed Description	H5N2306PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0031-0200Z Rev.2.00 Jun.25.2004 Features • Low on-...
Datasheet	H5N2306PF PDF File

Overview

H5N2306PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0031-0200Z Rev.
2.
00 Jun.
25.
2004 Features • Low on-resistance • Low leakage current www.
DataSheet4U.
com • High speed switching Outline TO-3PFM D G 1 S 1.
Gate 2.
Drain 3.
Source 2 3 Rev.
2.
00, Jun.
25.
2004, page 1 of 9 H5N2306PF Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 230 ±30 30 160 30 160 15 60 2.
08 150 –55 to +150 Rating V V A A A A A W °C/W °C °C Unit Avalanche current IAP Note3 Channel dissipatio...

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H5N2306PF Silicon N Channel MOS FET High Speed Power Switching - Renesas Technology

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