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H5N2504DS

Renesas Technology
Part Number H5N2504DS
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H5N2504DL, H5N2504DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1106-0200 (Previous: ADE-208-1375A) Rev....
Datasheet PDF File H5N2504DS PDF File

H5N2504DS
H5N2504DS


Overview
H5N2504DL, H5N2504DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1106-0200 (Previous: ADE-208-1375A) Rev.
2.
00 Sep 07, 2005 Features www.
DataSheet4U.
com • Low • Low on-resistance leakage current • High speed switching • Low gate charge • Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 4 D RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 1 2 G 3 S 1.
Gate 2.
Drain 3.
Source 4.
Drain 1 2 3 Rev.
2.
00 Sep 07, 2005 page 1 of 7 H5N2504DL, H5N2504DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance www.
DataSheet4U.
com Channel temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 250 ±20 7 28 7 28 7 30 4.
17 150 –55 to +150 Unit V V A A A A A W °C/W °C °C IDR (pulse) Note 3 IAP Pch θ ch-c Tch Tstg Note 1 Note 2 Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Tch ≤ 150°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4.
Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Qrr Min 250 — — 1.
0 — — 5 — — — — — — — — — — — — — Typ — — — — 0.
48 0.
5 8.
5 570 60 12 13 18 70 8 21 2 6 0.
85 120 0.
48 Max — ±0.
1 1 2.
5 0.
63 0.
67 — — — — — — — — — — — 1.
30 — — Unit V µA µA V Ω ...



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