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H5N2521FN

Renesas Technology
Part Number H5N2521FN
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H5N2521FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1619-0101 Rev.1.01 May 13, 2008 Features • Low on-...
Datasheet PDF File H5N2521FN PDF File

H5N2521FN
H5N2521FN

Overview
H5N2521FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1619-0101 Rev.
1.
01 May 13, 2008 Features • Low on-resistance • Low leakage current www.
DataSheet4U.
com • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1.
Gate 2.
Drain 3.
Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 3 6 3 6 6 2.
2 20 6.
25 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C REJ03G1619-0101 Rev.
1.
01 May 13, 2008 Page 1 of 6 H5N2521FN Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time www.
DataSheet4U.
com Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4.
Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 250 — — 3.
0 — — — — — — — — — — — — — Typ — — — — 1.
5 160 25 5 9 7 16 7 5.
3 0.
95 2.
98 0.
89 82 Max — 1.
0 ±0.
1 4.
5 2.
2 — — — — — — — — — — 1.
35 — Unit V µA µA V Ω pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 250 V, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 1.
5 A, VGS = 10 V VDS = 25 V VGS = 0 f = 1 MHz ID = 1.
5 A VGS = 10 V RL = 83 Ω Rg = 50 Ω VDD = 150 ...


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