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H5N5016PL

Renesas Technology
Part Number H5N5016PL
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Nov 20, 2008
Detailed Description H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0200Z Rev.2.00 Jul.02.2004 Features • Low on-...
Datasheet PDF File H5N5016PL PDF File

H5N5016PL
H5N5016PL

Overview
H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0200Z Rev.
2.
00 Jul.
02.
2004 Features • Low on-resistance • Low leakage current www.
DataSheet4U.
com • High speed switching • Built-in fast recovery diode Outline TO-3PL D G S 1 1.
Gate 2.
Drain (Flange) 3.
Source 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 PchNote 2 θch-c Tch Tstg Ratings 500 ±30 50 200 50 200 10 5.
5 250 0.
5 150 –55 to +150 V V A A A A A mJ W °C /W °C °C Unit Rev.
2.
00, Jul.
02.
2004, page 1 of 6 H5N5016PL Electrical Characteristics (Ta = 25°C)...


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