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H7N0602LS

Renesas Technology
Part Number H7N0602LS
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Nov 20, 2008
Detailed Description H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1130-0600 Rev.6.00 Oct 16, 20...
Datasheet PDF File H7N0602LS PDF File

H7N0602LS
H7N0602LS

Overview
H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1130-0600 Rev.
6.
00 Oct 16, 2006 Features • Low on-resistance RDS (on) = 4.
1 mΩ typ.
www.
DataSheet4U.
com • 4.
5 V gate drive devices • High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1.
Gate 2.
Drain 3.
Source 4.
Drain 1 1 2 3 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) H7N0602LD H7N0602LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N0602LM Rev.
6.
00 Oct 16, 2006 page 1 of 8 H7N0602LD, H7N0602LS, H7N0602LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.
DataSheet4U.
com Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Sym...


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