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HAT1055RJ

Renesas Technology
Part Number HAT1055RJ
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0067-0100Z Rev.1.00 Aug.29.2003 www...
Datasheet PDF File HAT1055RJ PDF File

HAT1055RJ
HAT1055RJ

Overview
HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0067-0100Z Rev.
1.
00 Aug.
29.
2003 www.
DataSheet4U.
com Features • • • • Low on-resistance Capable of 4.
5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Rev.
1.
00, Aug.
29.
2003, page 1 of 9 HAT1055R, HAT1055RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings HAT1055R Drain to source voltage Gate to source voltage Drain current www.
DataSheet4U.
com Unit HAT1055RJ –60 ±20 –5 –40 –5 2.
14 2 3 150 –55 to +150 V V A A A mJ W W °C °C VDSS VGSS ID ID (pulse) IAP Note4 Note4 EAR Note1 –60 ±20 –5 –40 — — 2 3 150 –55 to +150 Drain peak current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.
2.
3.
4.
Pch Note2 PchNote3 Tch Tstg PW ≤...


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