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HAT1097R

Renesas Technology
Part Number HAT1097R
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT1097R, HAT1097RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0529-0100 Rev.1.00 Feb.15.2005 Fea...
Datasheet PDF File HAT1097R PDF File

HAT1097R
HAT1097R

Overview
HAT1097R, HAT1097RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0529-0100 Rev.
1.
00 Feb.
15.
2005 Features • Low on-resistance • Capable of 4.
5 V gate drive www.
DataSheet4U.
com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-A (Previous code: SOP-8 ) 5 6 7 8 D D D D 8 5 7 6 4 G 3 1 2 4 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings HAT1097R HAT1097RJ Unit V V A A A mJ W °C °C Drain to source voltage VDSS –60 –60 Gate to source voltage VGSS ±20 ±20 Drain current ID –5 –5 Note1 Drain peak cur...


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